A transparent electrochromic metal-insulator switching device with three-terminal transistor geometry

نویسندگان

  • Takayoshi Katase
  • Takaki Onozato
  • Misako Hirono
  • Taku Mizuno
  • Hiromichi Ohta
چکیده

Proton and hydroxyl ion play an essential role for tuning functionality of oxides because their electronic state can be controlled by modifying oxygen off-stoichiometry and/or protonation. Tungsten trioxide (WO3), a well-known electrochromic (EC) material for smart window, is a wide bandgap insulator, whereas it becomes a metallic conductor HxWO3 by protonation. Although one can utilize electrochromism together with metal-insulator (MI) switching for one device, such EC-MI switching cannot be utilized in current EC devices because of their two-terminal structure with parallel-plate configuration. Here we demonstrate a transparent EC-MI switchable device with three-terminal TFT-type structure using amorphous (a-) WO3 channel layer, which was fabricated on glass substrate at room temperature. We used water-infiltrated nano-porous glass, CAN (calcium aluminate with nano-pores), as a liquid-leakage-free solid gate insulator. At virgin state, the device was fully transparent in the visible-light region. For positive gate voltage, the active channel became dark blue, and electrical resistivity of the a-WO3 layer drastically decreased with protonation. For negative gate voltage, deprotonation occurred and the active channel returned to transparent insulator. Good cycleability of the present transparent EC-MI switching device would have potential for the development of advanced smart windows.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Investigation and simulation of the effect of Substrate Doping on the Switching Delay of 22nm Double-Insulating UTBB SOI MOSFET

In this paper, for the first time, the effect of the substrate doping of 22nm double-insulating UTBB silicon-on-insulator device on the switching performance and turn-on delay of the transistor is investigated. In UTBB devices, the substrate voltage is varied from positive to zero then negative voltages to trade-off transistor speed against the leakage current. Various circuit design procedures...

متن کامل

Switching Performance of Nanotube Core-Shell Heterojunction Electrically Doped Junctionless Tunnel Field Effect Transistor

Abstract: In this paper, a novel tunnel field effect transistor (TFET) is introduced, thatdue to its superior gate controllability, can be considered as a promising candidate forthe conventional TFET. The proposed electrically doped heterojunction TFET(EDHJTFET) has a 3D core-shell nanotube structure with external and internal gatessurrounding the channel that employs el...

متن کامل

Performance Investigation of Pentacene Based Organic Double Gate Field Effect Transistor and its Application as an Ultrasensitive Biosensor

In this paper, the electrical performance of double gate organic field effecttransistor (DG-OFET) are thoroughly investigated and feasibility of the deviceas an efficient biosensor is comprehensively assessed. The introduced deviceprovides better gate control over the channel, yielding better charge injectionproperties from source to channel and providing higher on-state...

متن کامل

A Field Effect Transistor based on the Mott Transition in a Molecular Layer

Here we propose and analyze the behavior of a FET–like switching device, the Mott transition field effect transistor, operating on a novel principle, the Mott metal–insulator transition. The device has FET-like characteristics with a low “ON” impedance and high “OFF” impedance. Function of the device is feasible down to nanoscale dimensions. Implementation with a class of organic charge transfe...

متن کامل

Improvement of a Nano-scale Silicon on Insulator Field Effect Transistor Performance using Electrode, Doping and Buried Oxide Engineering

In this work, a novel Silicon on Insulator (SOI) MOSFET is proposed and investigated. The drain and source electrode structures are optimized to enhance ON-current while global device temperature and hot carrier injection are decreased. In addition, to create an effective heat passage from channel to outside of the device, a silicon region has embedded in the buried oxide. In order to reduce th...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره 6  شماره 

صفحات  -

تاریخ انتشار 2016